Bio:

Andrea is head of the "Active Layers and Exploratory Materials" team at ASM Corporate R&D, based in imec.

Andrea received a Ph.D. in Astrophysics and Plasma Physics from the University of Milano. As post-doctoral researcher at the Eindhoven University of Technology, he worked on plasma based deposition of semiconducting thin films. As Sr. Research Scientist at TNO, he pioneered the development of the Spatial ALD technology for which he received the Paul H. Holloway Young Investigator Award by the American Vacuum Society.

At ASM Andrea works on atomic layer deposition of new dielectric and semiconductive oxides for logic and memory applications.

Abstract:

The architectures of integrated logic and memory devices have shifted from 2D to 3D layouts, enabling a continued scaling of device densities. Atomic layer deposition allows the conformal deposition of thin films with sub-nm thickness control on high aspect ratio 3D structures. ALD has become the technique of choice for the synthesis of an increasing number of materials in advanced logic and memory devices. After reviewing some of the key ALD processes which enable the fabrication of state-of-the-art 3DNAND and DRAM, we will present the ALD of ferroelectric materials in industrial scale ASM reactors