Bio:

Hitoshi Saito joined Fujitsu Limited in 1990 after earning a bachelor's degree in electrical engineering from Tokyo University of Agriculture and Technology. He has been contributed in the development of DRAM, LOGIC, NAND, FeRAM, and NRAM. Since 2023 he has been Sr. Dir. of Sales & Marketing Div. / Dir. of Energing Memory Dept. at FUJITSU SEMICONDUCTOR MEMORY SOLUTION LIMITED. His recent interest is processes, devices and marketing in emerging memory. He has or had 23 patents on semiconductors. He is the author or co-author of 11 articles on FeRAM or NRAM.

Abstract:

FeRAM is a nonvolatile memory which holds data by a ferroelectric capacitor with remanent polarization. FeRAM has five main advantages: low write power consumption, high write endurance, high write speed, long data retention and low temperature operation. Current FeRAM applications are automotive, wearables, meters, FAs, and counters. We are developing HZO FeRAM with low voltage writing and high writing endurance. I will describe the application of FeRAM in the near future.