Bio:

Yann Lamy is the head of the Power Devices Laboratory which is leading advanced R&D on Wide Band Gap (GaN and SiC) and ultra WBG (Diamond) semiconductors, through academic and industrial projects at CEA LETI. Previously, he has managed a large scale program on engineered wafers, enabling in particular the performance of power semiconductors. Yann LAMY was the R&D Lab Manager for RF and passive components, successfully transferring R&D results to industry.
He holds a PhD in Material Engineering and Hyperfrequency, a Master degree from ESPCI Paris and has authored or co-authored over 50 peer-reviewed publications.