Bio :

Toshiro Hiramoto received the Ph.D. degree in electronic engineering from the University of Tokyo in 1989. He joined Institute of Industrial Science, the University of Tokyo in 1994, where he has been a Professor since 2002. His research interests are various scaled silicon devices including FDSOI and nanowire FET as well as their statistical characteristics.

Abstract :

We have fabricated nanosheet oxide semiconductor FETs with sub-100nm gate length and the statistical variability data were compared with those of bulk planar Si MOSFET.