Bio:

PleaThierry Mourier is graduated in material science and electrochemistry from “Conservatoire National des arts et métiers” of Grenoble in 1989
He has been working in semiconductor area at LETI for 37 years now on different topics.
He started in the early phases of DUV lithography and chemical amplified photoresists developments before moving to metal deposition introducing Electrolytic metal deposition for Back End of Line and 3D applications. In the early 2000, He moved as an assignee to ST Microelectronics Crolles 300 to develop a planarizing copper electrodeposition process named “Electrochemical-Mechanical copper deposition” for 45 nm node CMOS before implementing the first generation of CMOS image sensors 2.5D integration based on TSV last on 300mm wafers. Back in LETI in 2010, he led the project of installing and starting a 300mm pilot line for 3D Integration and the introduction of new technologies as mid-process TSV and lead free solder flip chip on 300 mm integrations. He moved 7 years ago to the packaging laboratory of LETI Photonic department to lead the developments of 3D integration technologies like TSV and advanced packaging based on fine pitch flip chip for photonic devices co-integration.
Mr Mourier was involved in 85 pubse