Bio:

Dr. Stefan Müller received the joint master's degree in Microelectronics from Technical University Munich, Germany, and Nanyang Technological University Singapore in 2011. He also holds a German diploma degree in Mechatronics and Information Technology as well as a bachelor's degree in Mechanical Engineering both from Technical University Munich, Germany (2011/2008). In 2011, he joined NaMLab gGmbH, a research institute of University of Technology Dresden. In 2015, he received his PhD degree for his work on HfO2-based ferroelectric devices. In 2016, he co-founded FMC-The Ferroelectric Memory Company where he currently holds the position of CTO.

Abstract:

Over the last decade, more and more research and development effort has been assigned to memory devices based on ferroelectric hafnium oxide (FE-HfO2). This was caused by the fact that FE-HfO2 itself was the first ferroelectric material that is 100% compatible to today's state-of-the-art semiconductor manufacturing environments and it is scalable down to 5 nm film thickness.

In this talk, we will review the different memory cell development directions that FE-HfO2 has opened up and for which first demonstrations exist. Memory cells will be benchmarked against each other, and their suitability for different application spaces will be discussed. Moreover, the suitability of different ferroelectric memory cells for analog or digital computing will be presented.