Bio:

Patrick Le Maitre received his engineering degree from CentraleSupélec in 2000 and a Master of Engineering from the Tokyo Institute of Technology in 2001. He began his career at Renesas Technology, where he focused on semiconductor design and development. He then joined NXP Semiconductors, contributing to RF transceiver design. In 2010, he moved to STMicroelectronics and worked on the development of a silicon photonics platform Since 2019, he has been a research engineer at CEA-LETI, specializing in the development of GaN-based emissive devices for microdisplay and optical communication applications.

Abstract:

We present a development pathway for short-range optical chip-to-chip communication using GaN-on-Si microLED and microPD arrays integrated with CMOS. The approach combines device and circuit optimization, hybrid bonding, and system modeling, enabling scalable, energy-efficient interconnects for next-generation computing architectures.