Bio:

Patrick Le Maitre was born in Caen, France. He received his engineering degree from CentraleSupélec in 2000 and a Master of Engineering from the Tokyo Institute of Technology in 2001.He began his career at Renesas Technology in 2001, then joined NXP Semiconductors in 2004. In 2010, he moved to STMicroelectronics in Crolles, where he worked on silicon photonics platform development.Since 2019, he has been a research engineer at CEA-Leti, focusing on GaN-based emissive devices for microdisplay and optical communication applications.

Abstract:

We present a development pathway for short-range optical chip-to-chip communication using GaN-on-Si microLED and microPD arrays integrated with CMOS. The approach combines device and circuit optimization, hybrid bonding, and system modeling, enabling scalable, energy-efficient interconnects for next-generation computing architectures.