Bio:

Milan D. Pešić received a Ph.D. from the Technical University of Dresden, Germany, and is currently a Senior Member of the Technical Staff and Director of Technology development at Applied Materials Inc. He is leading a device and reliability team and overseeing device and cell physics and research activities in the field of advanced logic, (emerging) (non)volatile memories and devices. Previously, he was with MDLSoft Inc., Santa Clara, USA, Ferroelectric Memory Company, Dresden, and NaMLab, Dresden. Up to now, he has given 12 invited talks and (co)authored over 70 technical papers, four book chapters, and filed over 30 patents.

Abstract :

Only understanding of the materials and underlying physical mechanism can help us engineer novel superior devices of the future. Lead by this principle, we will look at ferroelectric (the most efficient memory material) and oxide-semiconductor materials and devices. We'll review what challenges they need to overcome to be integrated into logic and memory architectures. We will look in detail at the material phases, defects, vacancies, material changes, and underlying physical mechanisms governing mobility, variability, reliability, and others figures of merit of the devices they are integrated to.