Bio:

Laurent Grenouillet received the Engineer degree in physics in 1998 from the National Institute of Applied Sciences (INSA) in Lyon, France, and the PhD degree in electronic devices in 2001. From 2001 to 2009 he worked at CEA-Leti on Optoelectronics and Silicon Photonics. In 2009, he joined IBM Alliance in Albany, USA to contribute to the development of FDSOI technology and took part to the FDSOI technology transfer to Global Foundries (22FDX) in 2015. Back in France, he joined the Advanced Memory Device Laboratory at CEA-Leti where he worked on resistive switching memory devices. In 2018 he started to work on ferroelectric HfO2-based memories (FeCaps, FeRAM, FTJs) and he is now leading the Ferroelectric Memory group at CEA-Leti.

Abstract:

CEA-Leti research engineers have demonstrated for the first time a scalable Hf0.5Zr0.5O2 (HZO) based ferroelectric capacitor platform integrated into the back-end-of-line (BEOL) at the 22nm FD-SOI technology node. This breakthrough represents a major milestone in ferroelectric memory technology, significantly advancing scalability for embedded applications and positioning ferroelectric RAM (FeRAM) as a competitive memory solution for advanced nodes.

This demonstration opens the door to faster, more energy-efficient, and cost-effective memory solutions in embedded systems such as IoT, mobile devices, and edge computing, and further strengthening Europes's position in both the FD-SOI and the FeRAM Technologies.