Bio:

Laura VAUCHE, PhD is implementing Life Cycle Assessment (LCA), eco-design and eco-innovation at the Silicon Components Division (DCOS) at CEA-LETI since 2021. She obtained a Master’s degree in Chemistry in 2011 from Chimie ParisTech PSL and was awarded a PhD in Engineering Science: Micro and Nano-Electronics in 2015 from Aix-Marseille University. Her previous work includes process development, process integration, characterization and optimization of materials, semiconductors and devices for energy applications such as solar cells (thin films, silicon and multi-junction) and GaN power electronics.

Abstract:

Wide Band Gap (WBG) semiconductors have the potential to provide significant improvements in energy efficiency over conventional silicon (Si) semiconductors. While the potential for energy efficiency gains is widely researched, the the energy use during manufacturing processes and other environmental impacts remains insufficiently studied. No or sparse LCA data is available for the two currently most widespread WBG semiconductors materials are gallium nitride (GaN or GaN/Si) and silicon carbide (SiC). This paper, for the first time, presents a cradle to gate life cycle assessment for a GaN power device,The results identify environmental hotspots associated with different materials and processes.