Bio:

Dr. Müller is a Senior Member of Technical Staff in the TD Organization of GlobalFoundries and is currently driving next-generation MRAM stack development activities. Previously he was acting as the overall-integrator for the now qualified and ramped embedded 22FDX® STT-MRAM technology. Prior to joining GlobalFoundries Dr. Müller was heading the group for Non-Volatile Memories at Fraunhofer IPMS (formerly known as CNT) overseeing direct industry collaborations and European projects focused on FRAM, FeFET, STT-MRAM, RRAM, and FLASH.

Dr. Müller holds a diploma degree in Applied Natural Science from the Technical University Freiberg and a Ph.D. degree in Electrical Engineering from the Technical University of Dresden. To date Dr. Müller has authored/co-authored >130 peer-reviewed journal papers, contributions to international conferences and patents (h-index: 49). As panelist, invited speaker or short course tutor Dr. Müller has served the scientific community at e.g. IEDM, IMW, ECS, NVMTS, SSDM, SISC, INTERMAG, etc., and as an expert in his field contributed to the ERD Working Group of the former ITRS.

Abstract:

STT-MRAM has successfully entered the embedded NVM market as an eFLASH replacement at the 2X nm node. This first entry point is mainly focused on MCUs targeted for low-power consumer/industrial IoT applications. However, with the now rapid acceleration of fully electrified mobility and autonomous driving on the horizon the automotive sector as well has a growing need for more performant and cost-effective chip technologies. Due to the fading scalability roadmap of the highly trusted eFLASH a new automotive capable NVM solution must be established to serve the needs of future technology nodes. Through its qualification and volume ramp STT-MRAM has proven to be the most reliable amongst the former emerging memories and can be viewed as the predestined successor of eFLASH in this demanding application space.

In this talk we will review the challenges and required innovations on the road towards an automotive capable embedded STT-MRAM solution. Especially the readability across temperature as well as the more stringent requirements in terms of chip failure rate require significant advancements from the first generation of eMRAM. Component failure in the field is not an option, so starting already inline, a solid line of defense needs to be established.

This work was funded in the framework of IPCEI-EUROFOUNDRY by the Federal Ministry for Economics and Energy and by the State of Saxony.