Bio:

Hervé BOUTRY received the M. Sc. degree in materials sciences and microelectronics engineering in 1997 from University of Lille, France. He received the PhD degree from the Institute of Microelectronics and Nanoelectronics of Lille in 2002, with a thesis on the Technological developpement of High Electron Mobility Transistors based on Antimonide III-V based semiconductors for High frequency Low Noise Amplifiers.

After a few years at UCL-Louvain, Belgium, in the materials & physics laboratory, he joined CEA-LETI in 2004 in the framework of TFT transistors development for microdisplay cells. From 2008 to 2012, he worked in the Packaging and Interconnection Laboratory as a Process Integration Engineer and involved in several European projects . Since 2012, he has been working at the Component On Silicon Department in CEA-LETI as a Device Integration Engineer and Project Leader. He is currently developping an InP-based HBT technology integrated in Si-Fab platform.

Abstract:

For the next generation of communications, referred as 6G, the use of bands beyond 100 GHz is being explored in order to achieve 1Tb/s datarates. One of the main challenges is the design of efficient power amplifiers while currently silicon technologies cannot meet these efficiency and power requirements.

This talk will go through the technological considerations needed for efficient sub-THz Power Amplifiers and the opportunities of InP on Silicon technology: from system overview, to 3D integration and InP HBT device on Silicon technological challenges, taking into account an early consideration of the technological choices' environmental impact.