Bio:

Dr. Cyrille Le Royer is a Senior Expert at CEA-Leti, specialized in advanced semiconductor (Si, SiGe, Ge; GaN, SiC) devices.
With 20+ years of experience, he has driven advancements in 28, 14 and sub 12 nm Fully Depleted (FD-SOI) technologies (and other innovative transistors for CMOS ICs) collaborating with industry leaders like STMicroelectronics, IBM, Soitec and GlobalFoundries.
Since 2018 he is involved in the Power Device activity in CEA-Leti: from GaN based HEMTs to now high-efficiency SiC power devices, he bridges academia and industry to shape next-gen microelectronics.
Dr. Le Royer has supervised 10 PhD students, led several French (including ANR projects) and European R&D projects (on FDSOI and Power) and authored 180+ publications (h-index: 31) and 34 patents.

Abstract:

In a world where supply chain disruptions and geopolitical tensions threaten critical technologies, Europe must secure its own power electronics sovereignty. Through the CARTHAGE project, CEA-Leti is developing next-gen SiC thyristors for dual-use applications—from grid resilience to defense systems—while offering agile, sovereign manufacturing to meet urgent operational needs. This talk will explore how we’re bridging the gap between lab innovation and battlefield-ready components.