Bio:

Laurent Grenouillet received the Engineer degree in physics in 1998 from the National Institute of Applied Sciences (INSA) in Lyon, France, and the PhD degree in electronic devices in 2001. From 2001 to 2009 he worked at CEA-Leti on Optoelectronics and Silicon Photonics. In 2009, he joined IBM Alliance in Albany, USA to contribute to the development of FDSOI technology and took part to the FDSOI technology transfer to Global Foundries (22FDX) in 2015. Back in France, he joined the Advanced Memory Device Laboratory at CEA-Leti where he worked on resistive switching memory devices. In 2018 he started to work on ferroelectric HfO2-based memories (FeCaps, FeRAM, FTJs) and he is now leading the Ferroelectric Memory group at CEA-Leti.